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SE2520L
RangeChargerTM 2.4GHz Power Amplifier IC Final
Applications
IEEE 802.11b DSSS Radios, Wireless LAN 2.4GHz Cordless Phones, ISM Radios BluetoothTM Wireless Technology
Product Description
The SE2520L is a power amplifier IC designed for the 2.4GHz ISM band and compliant with the IEEE 802.11b WLAN standard, providing up to +20dBm typical output power at 3.3V with ACPR of -30dBc 1st nd lobe and -50dBc 2 lobe, and requiring only 110mA. For 2.4GHz cordless telephone applications, the SE2520L produces +23dBm typical saturated output power at 3.6V. The SE2520L contains a linear analog control (0.1 to 1.6V) for controlling DC current and output power. The SE2520L includes a digital enable control for device on/off control. Ramping is 1 sec typical. This device is capable of operating at a duty cycle of 100 percent.
Features
High linear output power for IEEE802.11b, st nd +20dBm, ACPR 1 lobe -30dBc, 2 lobe -50dBc Low current consumption: 110mA at 3.3V High saturated output power for cordless telephone applications: +23dBm, 140mA at 3.6V Single supply voltage: 2.7 to 3.6V Wide Temperature range: -40 to +85C Integrated linear analog control for DC current and output power management Small plastic package, 6 Pin LPCC
Ordering Information
Type SE2520L SE2520L-R SE2520L-EK1 SE2520L-EK3 Package 6 Pin LPCC 6 Pin LPCC (1) Evaluation Kit Evaluation Kit
(1)
Remark Samples Shipped in Tape & Reel Standard Power Detect, Filter, Rx/Tx and Diversity Switches
Notes: (1) JEDEC QFN package.
Functional Block Diagram
V CTL V CC0 V EN
Bias Generator
IN
Stage 1
Interstage Match
Stage 2
OUT/V CC2
GND
V CC1
GND
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Pin Out Diagram
Note: Pads and die pad shown are at the bottom of package.
SE2520L Top View
6 1 2 6
SE2520L Bottom View
1 2 5 4 5 3 4
Die Pad
2520L Lot Code
3
Pin Out Description
Pin No. 1 Name VCTL VEN IN VCC0 VCC1 OUT/VCC2 GND Description Controls the RF output power level and DC current of the power amplifier. An analog control signal between 0.1V and 1.6V varies the PA output power between Min. and Max. values. Power Amplifier Enable pin. A digital control signal with logic high (power up) and logic low (power down) is used to turn the device on and off. Power amplifier RF input, external input matching network with DC blocking is required. Bias supply voltage. Stage 1 collector supply voltage, an external inter-stage matching network is required. PA Output and Stage2 collector supply voltage, external output matching network with DC blocking is required. Heatslug Die Pad is ground
2 3 4 5 6 Die Pad
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Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below. This device is ESD sensitive with an ESD rating of < 600V. Handling and assembly of this device should be at ESD protected workstations. Symbol VCC VCTL VEN IN TSTG Tj Parameter Supply Voltage (VCC0, VCC1, VCC2) Control Voltage Power Amplifier Enable RF Input Power Storage Temperature Range Maximum Junction Temperature -40 Min. -0.3 -0.3 -0.3 Max. +3.6 VCC VCC +8 +150 +150 Unit V V V dBm C C
Recommended Operating Conditions
Symbol TA VCC Parameter Operating Temperature Supply Voltage Min. -40 2.7 3.3 Typ. Max. +85 3.6 Unit C V
DC Electrical Characteristics
Conditions: VCC0 = VCC1 = VCC2 = VEN = 3.3V, VCTL = 1.6V, PIN = -8dBm, TA = 25C, f = 2.45GHz, using SiGe SE2520L-EV1 Evaluation Board. Symbol ICC ICC(sat) IccTEMP VCTL ICTL VEN ISTBY Parameter Supply Current, VCTL = 1.6V, PIN = -8dBm Supply Current (sat) @ PIN = 2dBm Supply Current variation over temperature from TA = 25C (-40C < TA < +85C) PA Output Power Control Voltage Range Current Sunk by VCTL Pin Logic High Voltage Logic Low Voltage Leakage Current when VEN = 0V, VCTL = 0V 0.1 2.0 0.8 200 0.1 60 1.6 100 V A V V A Min. Typ. 110 140 25 Max. 130 175 Unit mA mA %
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AC Electrical Characteristics
Conditions: VCC0 = VCC1 = VCC2 = VEN = 3.3V, VCTL = 1.6V, PIN = -8dBm, TA = 25C, f = 2.45GHz, using SiGe SE2520L-EV1 Evaluation Board. Symbol fL-U Parameter Frequency Range Output power, PIN = -8dBm, VCTL = 1.6V POUT Output power, PIN = -8dBm, VCTL = 0.1V Saturated Output Power, PIN = +2dBm, VCTL = 1.6V dPOUT /dVCTL G GVAR 2f,3f,4f,5f IS21 IOFF IS12I tR STAB Control Voltage Sensitivity Gain, small signal Gain Variation over band (2400-2485 MHz) Harmonics Isolation in "OFF" State, PIN <= +2dBm, VEN = 0V Reverse Isolation Rise and Fall Time 10% to 90% Stability (PIN <= +2dBm, Load VSWR = 6:1) 2 25 32 35 42 1.2 Note 1 1 1 1 21 Min. 2400 18 20 -10 23 40 29 1.0 2.0 -30 Typ. Max. 2500 22 5 Unit MHz dBm dBm dBm dBm/V dB dB dBm/100kHz dB dB s
All non-harmonically related outputs less than -50 dBc/100kHz
Notes: (1) Parameter measured with RF modulation based on IEEE 802.11b standard, meeting ACPR of -30dBc 1st lobe and -50dBc 2nd lobe (2) Harmonic levels and ACPR are greatly affected by topology of external matching networks.
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Typical Performance Characteristics
Conditions: VCC = 3.3V, VCTL = 1.6V, VEN = 3.3V, F = 2.45GHz, using IEEE802.11b modulation, using SiGe SE2520L-EV1 Evaluation Board.
Output Power vs. Input Power 3V 26 24 22 20 18 16 14 12 10 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Input Power (dBm) 3.3V 3.6V
Output Power vs. Input Power 3V 26 24 22 20 18 16 14 12 10 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Input Power (dBm) 3.3V 3.6V
Pout (dBm)
ACPR vs. Output Power 3V -15 ACPR (dBc) 3.3V 3.6V
Pout (dBm)
ACPR vs. Input Power 3V -15 ACPR (dBc) -20 -25 -30 -35 -40 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Input Power (dBm) 3.3V 3.6V
-20 -25 -30 -35 -40 10 12 14 16 18 20 22 24 Output Power (dBm)
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Harm onics vs Output Pow er 2H -20 -30 -40 -50 -60 -70 -80 11 13 15 17 19 21 23 Output Pow er (dBm ) 3H 4H 5H
-15 -20 ACPR (dBc) -25 -30 -35 -40 11
ACPR vs. Output Power 2.4GHz 2.45GHz 2.5GHz
Harmonics (dBm/1MHz)
13
15
17
19
21
23
Output Power (dBm)
;
Pow er Control Profile, PIN = -8dBm Pout 25 Pout (dBm) 15 5 -5 -15 -25 0 0.5 1 1.5 2 2.5 3 V CTL (V) Icc (mA) 150 135 120 105 90 75 60 45 30 15 0 3.5
0 -10 -20 -30 -40 -50 -60 -70
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
ACPR performance vs. VCTL, PIN = -8dBm
1st AC 2nd AC Pout
25 20 15 10 5 0 -5 -10 -15 VCTL(V)
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ACPR (dBc)
Icc (mA)
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Package Information
Notes: 1. 2. 3. 4. 5.
Dimensions are in millimeters Tolerance 0.1mm unless otherwise specified Moisture/ Reflow Sensitivity Classification: Level 1 (IPC/JEDEC-J-STD-020A) Lead finish is 100% lead-free electrolytic tin. Exposed heat/electrical ground pad at bottom of package
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Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor Inc. reserves the right to change information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor Inc. reserves the right to change information at any time without notification. Final The datasheet contains information from the final product specification. SiGe Semiconductor Inc. reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an "as is" basis. SiGe Semiconductor Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor Inc. RangerCharger , StreamCharger , PointCharger , and LightCharger Bluetooth
TM TM TM TM TM
are trademarks owned by SiGe Semiconductor Inc.
logos and trademarks are owned by Bluetooth SIG Inc., USA and licensed to SiGe Semiconductor.
Copyright 2002 SiGe Semiconductor All Rights Reserved
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